PSMN9R0-30YL Datasheet, NXP Semiconductors

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PSMN9R0-30YL Features and benefits

* High efficiency due to low switching and conduction losses
* Suitable for logic level gate drive sources 1.3 Applications
* Class-D amplifiers
* DC-to.

PSMN9R0-30YL Application

1.2 Features and benefits
* High efficiency due to low switching and conduction losses
* Suitable for logic l.

PSMN9R0-30YL Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits
* High .

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